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Gallium Arsenide/Aluminum Gallium Arsenide Semiconducting Nanowires, p-type, 50-100nm
 Gallium_Arsenide_Aluminum_Gallium_Arsenide_Semiconducting_Nanowires_n-type_50-100nm
Properties
Gallium Arsenide/Aluminum Gallium Arsenide,
Size 50-100 nm
Gallium Arsenide/Aluminum Gallium Arsenide (core / shell) Nanowires
Composition: Gallium Arsenide/Aluminum
Gallium Arsenide Core-Shell
Semiconducting Nanowires
Diameter Range: 50-100 nm
Approx 1E+6 Nanowires
Length Range: 1-5μm

Available with 3 different dopant;
Dopant: p-type ,Beryllium doped
Formulation: Supplied in anhydrous isopropyl alcoho
packed under nitrogen.
Intended use: Numerous Uses including Nanowire Junction Applications
or the fundamental study of charge transport.

Catalog Number Size in nm Pack size in ml
RN-NW-GaAs/AlGaAs-100P 50-100 nm 5

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