Gallium Arsenide Nanowires (GaAs)
Size 50-100 nm
Composition: Gallium Arsenide
Semiconducting Nanowires
Diameter Range: 50-100 nm
Approx 1E+6 Nanowires,
Length Range: 1-5µm

Available with 3 different dopant;
Dopant: n-type ,Silicon doped
Formulation: Supplied in anhydrous isopropyl alcohol,
packed under nitrogen.
Intended use: Numerous Uses including Nanowire Junction Applications
or the fundamental study of charge transport.