designed to deliver the Purest
Gallium Arsenide Semiconducting Nanowires, p-type,20-50nm
Gallium Arsenide Nanowires (GaAs)
Size 20-50 nm
Composition: Gallium Arsenide Semiconducting Nanowires
Diameter Range: 20-50 nm
Approx 1E+6 Nanowires,
Length Range: 1-5μm

Available with 3 different dopant;
Dopant: p-type ,Beryllium doped
Formulation: Supplied in anhydrous isopropyl alcohol,
packed under nitrogen.

Catalog Number Size in nm Pack size in ml
RN-NW-GaAs-50P 20-50 5
Diagnostic Supplier