Indium Arsenide Semiconducting Nanowires, n-type,20-50nm
Properties
Indium Gallium Arsenide Nanowires , Size 20-50 nm Composition: Indium Arsenide Semiconducting Nanowires Diameter Range: 20-50 nm Approx 1E+6 Nanowires Length Range: 1-5μm Available with 2 different types; Dopant: n-type ,Silicon doped Formulation: Supplied in anhydrous isopropyl alcohol packed under nitrogen.
| Catalog Number | Size in nm | Pack size in ml |
| RN-NW-InAs-50N | 20-50 nm | 5 |