designed to deliver the Purest
Indium Arsenide Semiconducting Nanowires, n-type,20-50nm
Indium Gallium Arsenide Nanowires ,
Size 20-50 nm
Composition: Indium Arsenide Semiconducting Nanowires
Diameter Range: 20-50 nm
Approx 1E+6 Nanowires
Length Range: 1-5μm

Available with 2 different types;
Dopant: n-type ,Silicon doped
Formulation: Supplied in anhydrous isopropyl alcohol
packed under nitrogen.

Catalog Number Size in nm Pack size in ml
RN-NW-InAs-50N 20-50 nm 5
Diagnostic Supplier