Indium Gallium Arsenide Nanowires ,
Size 50-100 nm
Composition: Indium Arsenide
Semiconducting Nanowires
Diameter Range: 50-100 nm
Approx 1E+6 Nanowires
Length Range: 1-5μm

Available with 2 different types;
Dopant: n-type , Silicon doped
Formulation: Supplied in anhydrous isopropyl alcohol
packed under nitrogen.
Intended use: Numerous Uses including Nanowire Junction Applications
or the fundamental study of charge transport.