designed to deliver the Purest
Indium Gallium Arsenide Semiconducting Nanowires, n-type, 50-100nm
Indium Arsenide,
Size 50-100 nm
Composition: Indium Gallium
Arsenide Semiconducting Nanowires
Diameter Range: 50-100 nm
Approx 1E+6 Nanowires,
Length Range: 1-5μm

Available with 3 different dopant;
Dopant: n-type ,Silicon doped
Formulation: Supplied in anhydrous isopropyl alcohol
packed under nitrogen.
Intended use: Numerous Uses including Nanowire Junction Applications
or the fundamental study of charge transport.

Catalog Number Size in nm Pack size in ml
RN-NW-InGaAs-100N 50-100 5
Diagnostic Supplier