Indium Gallium Arsenide Semiconducting Nanowires, undoped-type,20-50nm
Properties
Indium Gallium Arsenide Nanowires , Size 20-50 nm Composition: Indium Gallium Arsenide Semiconducting Nanowires Diameter Range: 50-100 nm Approx 1E+6 Nanowires, Length Range: 1-5μm Available with 3 different dopant; Dopant: Undoped Formulation: Supplied in anhydrous isopropyl alcohol packed under nitrogen. Intended use: Numerous Uses including Nanowire Junction Applications or the fundamental study of charge transport.
| Catalog Number | Size in nm | Pack size in ml |
| RN-NW-InGaAs-100U | 50-100 | 5 |