designed to deliver the Purest
Indium Gallium Arsenide Semiconducting Nanowires, undoped-type,20-50nm
 Indium_Gallium_Arsenide_Nanowires
Properties
Indium Gallium Arsenide Nanowires ,
Size 20-50 nm
Composition: Indium Gallium
Arsenide Semiconducting Nanowires
Diameter Range: 50-100 nm
Approx 1E+6 Nanowires,
Length Range: 1-5μm

Available with 3 different dopant;
Dopant: Undoped
Formulation: Supplied in anhydrous isopropyl alcohol
packed under nitrogen.
Intended use: Numerous Uses including Nanowire Junction Applications
or the fundamental study of charge transport.

Catalog Number Size in nm Pack size in ml
RN-NW-InGaAs-100U 50-100 5

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