Gallium Arsenide/Aluminum Gallium Arsenide Semiconducting Nanowires, n-type,20-50nm
Properties
Gallium Arsenide/Aluminum Gallium Arsenide, Size 20-50 nm Composition: Gallium Arsenide/Aluminum Gallium Arsenide Core-Shell Semiconducting Nanowires Diameter Range: 20-50 nm Approx 1E+6 Nanowires Length Range: 1-5μm Available with 3 different dopant; Dopant: n-type ,Silicon doped
| Catalog Number | Size in nm | Pack size in ml |
| RN-NW-GaAs/AlGaAs-50N | 20-50nm | 5 |