Gallium Arsenide/Aluminum Gallium Arsenide Semiconducting Nanowires, p-type, 50-100nm
Properties
Gallium Arsenide/Aluminum Gallium Arsenide, Size 50-100 nm Gallium Arsenide/Aluminum Gallium Arsenide (core / shell) Nanowires Composition: Gallium Arsenide/Aluminum Gallium Arsenide Core-Shell Semiconducting Nanowires Diameter Range: 50-100 nm Approx 1E+6 Nanowires Length Range: 1-5μm Available with 3 different dopant; Dopant: p-type ,Beryllium doped Formulation: Supplied in anhydrous isopropyl alcoho packed under nitrogen. Intended use: Numerous Uses including Nanowire Junction Applications or the fundamental study of charge transport.
| Catalog Number | Size in nm | Pack size in ml |
| RN-NW-GaAs/AlGaAs-100P | 50-100 nm | 5 |