Gallium Arsenide Semiconducting Nanowires, p-type,20-50nm
Properties
Gallium Arsenide Nanowires (GaAs) Size 20-50 nm Composition: Gallium Arsenide Semiconducting Nanowires Diameter Range: 20-50 nm Approx 1E+6 Nanowires, Length Range: 1-5μm Available with 3 different dopant; Dopant: p-type ,Beryllium doped Formulation: Supplied in anhydrous isopropyl alcohol, packed under nitrogen.
| Catalog Number | Size in nm | Pack size in ml |
| RN-NW-GaAs-50P | 20-50 | 5 |