Gallium Arsenide Semiconducting Nanowires, p-type, 50-100nm
Properties
Gallium Arsenide Nanowires (GaAs) Size 50-100 nm Composition: Gallium Arsenide Semiconducting Nanowires Diameter Range: 50-100 nm Approx 1E+6 Nanowires, Length Range: 1-5µm Available with 3 different dopant; Dopant: p-type ,Beryllium doped Formulation: Supplied in anhydrous isopropyl alcohol, packed under nitrogen. Intended use: Numerous Uses including Nanowire Junction Applications or the fundamental study of charge transport.
| Catalog Number | Size in nm | Pack size in ml |
| RN-NW-GaAs-100P | 50-100 | 5 |