Indium Gallium Arsenide Nanowires ,
Size 20-50 nm
Composition: Indium Gallium
Arsenide Semiconducting Nanowires
Diameter Range: 20-50 nm
Approx 1E+6 Nanowires,
Length Range: 1-5μm

Available with 3 different dopant;
Dopant: p-type ,Beryllium doped
Formulation: Supplied in anhydrous isopropyl alcohol
packed under nitrogen.
Intended use: Numerous Uses including Nanowire Junction Applications
or the fundamental study of charge transport.